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average pore size meaning in English

平均孔径
平均孔隙大小

Examples

  1. Al2o3 ceramic wafer substrate had average pore size about 10 m and upper porosity over 40 % , which was added pore - forming agent of graphite and shaped by pressing
    采用压制成型制备的添加石墨成孔剂的圆片状al _ 2o _ 3陶瓷支撑体具有较小的平均孔径( 10 m左右)和较高的孔隙率( 40以上) 。
  2. Experiments indicate that the micropore membrane made by the optimal process and recipe of solution has porosity > 75 % , average pore size < 1m , the similar structure to ideal model
    实验结果表明,利用优化工艺所制得pvdf微孔膜孔隙率在75以上,平均孔径在1 m以下,透湿量较高,形态结构接近于理想模型的微孔膜。
  3. While sintered by radiation heating , the average pore size decreased slowly with increase of temperature at first , and then fell sharply , showing that the pecht technique could achieve consolidated structure at relative low temperature . fe was sintered at on / off of 6 / 1 , 12 / 2 , 24 / 4 , 48 / 8
    脉冲大电流烧结fe颗粒材料,烧结体孔径平均值随温度呈波浪关系;辐射加热烧结体的孔径平均值随温度的升高先缓慢减小,继续升高温度,孔径平均值急剧减小。
  4. The second chapter shows the synthesis and electrochemical capacitance performance of the mesoporous co ( oh ) 2 in 1 m koh electrolyte . mesoporous co ( oh ) 2 with the high specific area of 283 m2 / g and average pore size of 11 nm by means of the sds as soft template and urea as precipitator was synthesized
    第二章为多孔cooh ) 2的制备及其超电容行为:利用十二烷基硫酸钠为软模板,尿素为沉淀剂合成了具有高比表面积( 283m2 / g ) 、平均孔径为11nm的中孔co ( oh ) 2体相材料。
  5. The third model was designed to investigate atom diffusion at contacting point . fe was sintered at 500 , 550 > 600 , 650 > 700 under bpec and radiation heating . the test results of image processing indicated that the average pore size took on wavelike with temperature under bpec heating
    脉冲大电流加热条件下,其它条件相同时,分别在800 、 900的温度武汉理土大学硕士学位论文下扩散连接cu丝和ni丝,结果表明接触线处cu和ni的扩散系数随温度的升高而增大。
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Related Words

  1. breathing pore
  2. pores filling
  3. pore rhomb
  4. pore area
  5. pore cluster
  6. interlock pore
  7. pore zone
  8. pored wood
  9. pore path
  10. opening pores
  11. average pore density
  12. average pore diameter
  13. average port time of ship
  14. average position action
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